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        光注入退火爐

        光注入退火爐

        調(diào)節(jié)電池片費米能級變化,控制H總量及價態(tài),提高H鈍化與缺陷修復(fù)效率,達到降低P型電池衰減效應(yīng),提高N型電池轉(zhuǎn)換效率的效果。

        設(shè)備名稱 Equipment Name

        光注入退火爐  Light Injection Annealing Furnace

        設(shè)備型號 Equipment Model

        SC-LED05L/RA


        設(shè)備用途 Equipment Application

        調(diào)節(jié)電池片費米能級變化,控制H總量及價態(tài),提高H鈍化與缺陷修復(fù)效率,達到降低P型電池衰減效應(yīng),提高N型電池轉(zhuǎn)換效率的效果。

        By adjusting the Fermi energy level of the cell, controlling the total amount and valence state of H,improving the efficiency of H passivation and defect repair, to reduce the LID effect of P-type cells and improve the conversion efficiency of N-type cells.


        工藝流程  Process Flow

        預(yù)熱→光注入→冷卻

        Pre-heating →Light Injection →Cooling


        技術(shù)特點  Features

        1、雙軌產(chǎn)線,機架電氣完全獨立,互不干擾。

        Dual-track production line, the rack and electrical parts completely independent without interfering operations of each other.

        2、大產(chǎn)能:匹配絲印工序產(chǎn)能,CT≤0.80秒,基于硅片尺寸M10(18X±0.5mm*18X±0.5mm)。
        High throughput: match with the throughput of screen printing process, CT≤0.80s,based on silicon wafer size M10 (18X±0.5mm*18X±0.5mm). 


        設(shè)備參數(shù)  Parameters



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