管式LPCVD設(shè)備

設(shè)備名稱 Equipment Name

管式LPCVD設(shè)備  Horizontal LPCVD

設(shè)備型號 Equipment Model

LD-420/LD-420L/LD-420MAX

設(shè)備用途 Equipment Application

TOPCon電池隧穿氧化層、i-poly、D-poly低壓化學(xué)氣相沉積。

Deposition of tunnel oxide layer, i-Poly and D-poly for TOPCon solar cells.

技術(shù)特點(diǎn)  Features

1、低壓與熱壁工藝特性，成膜均勻性、致密性好。

Low pressure and hot wall process characteristics, with better film uniformity and good compactness.

2、LPCVD工藝特性，基片密排對成膜速率影響小，單管裝片量大。
LPCVD process, densely loaded substrates have little effect on the coating rate, with large loading capacity in single tube.

3、更多溫區(qū)設(shè)置，可靠保證片間均勻性。
More temperature zones to ensure the uniformity between wafers reliably.

4、獨(dú)立調(diào)節(jié)分段進(jìn)氣，彌補(bǔ)氣流耗盡效應(yīng)。
Independently adjustable segmented air inlet to compensate for the airflow depletion effect.

設(shè)備參數(shù)  Parameters