Horizontal PECVD (Poly-Si)

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        Horizontal PECVD (Poly-Si)

          Features  

        · The tunnel oxide layer, i-poly, and D-poly layers can be coated in the same furnace tube which helps in reducing the process steps, improving the yield and lowering the breakage rate effectively.

        · Without hot wall effects, so quartz tube has a long service life. 

        · Slight wrap-around deposition which is easy to be removed.

        · Precise doping; available to introduce other efficiency-enhancing doping elements, suitable for process expansion and large space for efficiency improvement.

        · Patented anti-conduction technology.


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